Shallow Trench Isolation(STI) is being used to isolate device on the structure of a silicon wafer which has been replacing the older local oxidation of silicon(LOCOS) technology for isolation of smaller feature size. As design rule came into 0.25 ㎛ or less reverse etching is not workable for the acceptable level due to aliginment problem. Most critical process parameters are nitride loss & oxide dishing which
demands high selectivity of oxide-to-nitrade. However, the conventional oxide CMP slurries such as Silica slurries cant’s achieve the high level of selectivity due to silicon nitride layer, while Cerium oxide is the most desirable slurry because of its high selectivity over nitride. ANP’s Ceria Slurry has been developed to meet such a strong demand of the slurry which could provide high selectivity, fast remonal rate of oxide, low defectivity & good stability.
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