Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.

Special Features

Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.
Maximum substrate heater temperature: 1,000°C for PECVD, 800°C for Sputter and 500°C for e-beam evaporation, respectively.
Automatic loading transfer chamber around which PECVD, Sputter and E-beam evaporation chambers are attached.
PC controled system : recipe save, open function, and fully automation except for e-beam evaporation module.

Specifications

PECVD
Wafer capacity : 8" x1
Average throughpu t: 2,000 wafer/year
Source power : 2.5kW (13.56MHz)
Bias power : 0.3kW (12.56MHz)
TMP : 1,100 l/sec
Dry pump : 9,000 l/min
Substrate heater : SiC coated graphite, Max.1,000°C
RF ICP coil : 2turns
MFC : CH4(50sccm), H2(200sccm), Ar(200sccm)
Pressure control : Automatic pressure control system

Sputter
Wafer capacity : 8" x1
Average throughpu t: 2,000 wafer/year
Sputter power : 1.5kW (DC)
Bias power : 0.3kW (13.56MHz)
TMP : 1,100 l/sec
Dry pump : 9,000 l/min
Substrate heater : SiC coated graphite, Max.800°C
MFC : Ar(100sccm), O2(50sccm), N2(50sccm)
Pressure control : Automatic pressure control system

E-Beam evaporation
Wafer capacity : 8" x1
Average throughpu t: 2,000 wafer/year
E-beam power : 10kW(10kV, 1A)
E-beam gun : 4 pocket, 25cc, 180°
TMP : 1,100 l/sec
Dry pump : 9,000 l/min
Substrate heater : SiC coated graphite, Max.500°C
Thickness monitor : SQC310