The probe card can simultaneously test many chips on a semiconductor wafer to check the quality of the chips, and serves as an interface as a consumable part by transmitting electrical signals to the wafer pad. Our probe card has good response to Pad Array and Fine Pitch by adopting its own MEMS block, and can be used for DRAM, Flash and Non-Memory Field, especially CMOS Image Sensor.
Our probecard for NAND-Flash Memory provides high-performance alignment precision and signal quality.
Probe cards for DRAM require High-Performance, Fine Pitch and high density. Compared to probecards for NAND-Flash Memory, high-strength, high-current, and fine pitch response technologies are required.
Our main product is probecard for NAND-Flash Memory, and the main specifications are as follows.
Main PCB : Low Permitivity MLB / High density wiring MWB
Tip Length : 30㎛ (Noble Metal)
Tip Diameter : 8 ~ 15 ㎛
Density : 110,000Pin (MAX)
Needle Force : 0.8 ~ 1.2gf/mil
Alignment (X,Y) : Single Temp. ±10㎛ / Dual Temp. ±15㎛
Planarity : ±15㎛± for 12" Wafer 1T/D
Min. Pad to Pad Pitch: 58 ㎛
Min. Pad Size : 55 x 50 ㎛
Test Temperature : Test : -40~105℃ / WFBI : 100~125℃
Life Time : Max 500k with standard Cleaning Condition
Application: NAND-Flash (WFBI & EDS) / DRAM (WFBI & EDS) / MCU